2SC828 NPN Transistor

₨ 5

The 2SC828 NPN Transistor is a general-purpose silicon transistor suitable for low-power switching and signal amplification applications.
Featuring a 25V collector-emitter voltage rating, up to 200mA collector current, and a compact TO-92 package, it is ideal for DIY electronics, signal circuits, and electronic repairs.

Out of stock

Add to Wishlist
Add to Wishlist

Description

The 2SC828 NPN Transistor is a compact silicon bipolar junction transistor (BJT) designed for general-purpose electronic circuits. It can be used for signal amplification and switching applications where reliable performance and low power consumption are important.

With a collector-emitter voltage rating of 25V and a listed maximum collector current of 200mA, the 2SC828 is suitable for various low-power electronic projects, signal-processing circuits, and general-purpose transistor applications. Its small TO-92 package makes it convenient for PCB mounting and circuit prototyping.

The 2SC828 transistor is a practical choice for electronics students, hobbyists, technicians, and engineers working on circuit development, maintenance, and repair projects.

Key Features

  • NPN silicon transistor: Suitable for general-purpose amplification and switching.
  • 25V collector-emitter voltage: Designed for low-voltage electronic circuits within its rated limits.
  • 200mA listed maximum collector current: Suitable for low-power loads when operated within the manufacturer’s specifications.
  • DC current gain of 130: Listed gain value for transistor amplification applications.
  • High-frequency response: Listed transition frequency of 220MHz.
  • Compact TO-92 package: Suitable for breadboards and printed circuit boards.
  • Versatile applications: Useful for signal circuits, switching, and electronic experimentation.

Applications

The 2SC828 NPN transistor can be used in:

  • Low-power switching circuits
  • Small-signal amplification
  • Signal-processing circuits
  • Electronic control systems
  • DIY electronics and educational projects
  • General-purpose circuit repairs
  • Low-power transistor-based designs

2SC828 Transistor Specifications

Parameter Specification
Transistor Type NPN Silicon BJT
Package Type TO-92
Collector-Emitter Voltage (VCEO) 25V
Collector-Base Voltage (VCBO) 30V
Emitter-Base Voltage (VEBO) 7V
Maximum Collector Current (IC) Listed as 200mA; verify datasheet
DC Current Gain (hFE) 130 (listed value)
Transition Frequency (fT) 220MHz
Power Dissipation 500mW (listed)
Collector Dissipation 0.4W (also listed)
Noise Figure 6dB (listed)
Operating Temperature Verify the manufacturer’s datasheet

Reviews

There are no reviews yet.

Be the first to review “2SC828 NPN Transistor”

Your email address will not be published. Required fields are marked *