Description
The TIP42C PNP Bipolar Junction Transistor (BJT) is a power transistor commonly used in electronic switching and amplification circuits. It allows a small base current to control a larger current flowing between the emitter and collector, making it useful for a wide range of electronic applications.
Available in a TO-220 package, the TIP42C is suitable for power supply circuits, audio amplifier output stages, voltage regulators, and general-purpose power-control projects. It can also be paired with a complementary NPN transistor, such as the TIP41C, in suitable push-pull amplifier and switching designs.
With a listed maximum collector current of 6A and collector power dissipation of 65W under appropriate thermal conditions, the TIP42C can handle demanding circuit applications when operated within its electrical and thermal limits.
Important voltage-rating note: The supplied product information lists both −40V and −100V for the collector-emitter and collector-base voltage ratings. These values conflict. Confirm the exact rating against the manufacturer’s datasheet for your component before designing or operating a circuit.
Key Features
- PNP bipolar junction power transistor
- TO-220 through-hole package
- Maximum collector current: −6A
- Listed collector power dissipation: 65W with suitable heat sinking and operating conditions
- DC current gain (hFE): 15–75
- Transition frequency: 3MHz
- Suitable for amplification and electronic switching
- Can be used in compatible complementary circuits with an NPN transistor such as TIP41C
- Useful for electronics repair, prototyping, and power-control projects
Technical Specifications
| Parameter | Specification |
|---|---|
| Model | TIP42C |
| Transistor Type | PNP BJT |
| Package | TO-220 |
| Collector-Emitter Voltage (VCEO) | −40V listed; verify against datasheet |
| Collector-Base Voltage (VCBO) | −40V listed; verify against datasheet |
| Emitter-Base Voltage (VEBO) | −5V |
| Maximum Collector Current (IC) | −6A |
| Collector Power Dissipation | 65W, subject to thermal conditions |
| DC Current Gain (hFE) | 15–75 |
| Transition Frequency | 3MHz |
| Operating and Storage Temperature | −65°C to +150°C, as listed |
| Complementary Transistor | TIP41C (NPN), subject to circuit requirements |
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