2N3906 PNP Transistor 40V, 200mA

₨ 5

The 2N3906 PNP Transistor is a general-purpose bipolar junction transistor designed for low-power switching and signal amplification.
With a 40V voltage rating, 200mA maximum collector current, and compact TO-92 package, it is ideal for DIY electronics, LED drivers, and small-signal amplifier circuits.

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Description

The 2N3906 PNP Transistor is a widely used silicon bipolar junction transistor (BJT) designed for general-purpose switching and low-power amplification. Its PNP configuration makes it suitable for circuits that require high-side switching, signal processing, and control of small electrical loads.

With a maximum collector-emitter voltage of 40V and a collector current rating of 200mA, the 2N3906 is a practical choice for electronic projects, signal amplifier stages, LED switching circuits, and various low-power control applications. Its compact TO-92 package makes it easy to install on breadboards and printed circuit boards.

Whether you are a student, electronics hobbyist, technician, or engineer, the 2N3906 transistor is a useful component for prototyping, circuit development, and electronic repairs.

Key Features

  • PNP bipolar junction transistor: Suitable for general-purpose switching and amplification.
  • 40V collector-emitter voltage: Designed for circuits operating within its maximum voltage rating.
  • 200mA maximum collector current: Ideal for low-power electronic loads.
  • High-frequency performance: Typical transition frequency of up to 250MHz.
  • DC current gain: Specified gain range of 100–300, depending on operating conditions.
  • Compact TO-92 package: Suitable for breadboards, PCB mounting, and compact electronic designs.
  • Versatile applications: Useful for LED drivers, signal amplification, switching circuits, and control systems.

Applications

The 2N3906 PNP transistor can be used in:

  • Low-power electronic switching circuits
  • Small-signal amplifier stages
  • LED and lamp control circuits
  • High-side switching applications
  • Inverter and converter circuits within its ratings
  • Signal processing and control circuits
  • Oscillators and LED flasher circuits
  • DIY electronics and educational projects
  • Suitable Darlington pair configurations

2N3906 PNP Transistor Specifications

Parameter Specification
Transistor Type PNP Silicon BJT
Package Type TO-92
Maximum Collector-Emitter Voltage 40V
Maximum Collector-Base Voltage 40V
Maximum Emitter-Base Voltage 5V
Maximum Collector Current 200mA
Maximum Power Dissipation 625mW*
DC Current Gain (hFE) 100–300
Transition Frequency (fT) 250MHz
Operating and Storage Temperature -55°C to +150°C

 

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