Description
The 2N3906 PNP Transistor is a widely used silicon bipolar junction transistor (BJT) designed for general-purpose switching and low-power amplification. Its PNP configuration makes it suitable for circuits that require high-side switching, signal processing, and control of small electrical loads.
With a maximum collector-emitter voltage of 40V and a collector current rating of 200mA, the 2N3906 is a practical choice for electronic projects, signal amplifier stages, LED switching circuits, and various low-power control applications. Its compact TO-92 package makes it easy to install on breadboards and printed circuit boards.
Whether you are a student, electronics hobbyist, technician, or engineer, the 2N3906 transistor is a useful component for prototyping, circuit development, and electronic repairs.
Key Features
- PNP bipolar junction transistor: Suitable for general-purpose switching and amplification.
- 40V collector-emitter voltage: Designed for circuits operating within its maximum voltage rating.
- 200mA maximum collector current: Ideal for low-power electronic loads.
- High-frequency performance: Typical transition frequency of up to 250MHz.
- DC current gain: Specified gain range of 100–300, depending on operating conditions.
- Compact TO-92 package: Suitable for breadboards, PCB mounting, and compact electronic designs.
- Versatile applications: Useful for LED drivers, signal amplification, switching circuits, and control systems.
Applications
The 2N3906 PNP transistor can be used in:
- Low-power electronic switching circuits
- Small-signal amplifier stages
- LED and lamp control circuits
- High-side switching applications
- Inverter and converter circuits within its ratings
- Signal processing and control circuits
- Oscillators and LED flasher circuits
- DIY electronics and educational projects
- Suitable Darlington pair configurations
2N3906 PNP Transistor Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Silicon BJT |
| Package Type | TO-92 |
| Maximum Collector-Emitter Voltage | 40V |
| Maximum Collector-Base Voltage | 40V |
| Maximum Emitter-Base Voltage | 5V |
| Maximum Collector Current | 200mA |
| Maximum Power Dissipation | 625mW* |
| DC Current Gain (hFE) | 100–300 |
| Transition Frequency (fT) | 250MHz |
| Operating and Storage Temperature | -55°C to +150°C |







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