FQP30N06 Transistor Power MOSFET N Channel 60V 30A

₨ 80

The FQP30N06 is an N-channel power MOSFET designed for electronic switching, motor control, and high-current DC applications.
With a listed 60V drain-to-source rating and up to 32A continuous drain current under specified conditions, it is suitable for power electronics and microcontroller-controlled projects when properly driven and cooled

Out of stock

Add to Wishlist
Add to Wishlist

Description

The FQP30N06 N-Channel Power MOSFET is a power semiconductor designed to switch electrical loads efficiently in DC circuits. Its low on-state resistance helps reduce conduction losses when the MOSFET is driven with an appropriate gate voltage. The TO-220 package makes it suitable for through-hole PCB mounting and heatsink installation.

This MOSFET can be used in motor drivers, LED lighting controllers, DC power switching, battery-powered projects, and other power electronics applications. It can be controlled by a microcontroller through a suitable gate-drive arrangement, but the gate voltage must be high enough to achieve the required low on-resistance.

Although the listing describes it as logic-level compatible, do not assume that every 5V control signal will allow 30A operation. The specified on-resistance is 35mΩ at a gate-source voltage of 10V, so performance at 5V should be verified from the exact manufacturer’s datasheet.

Key Features

  • N-channel enhancement-mode power MOSFET
  • Maximum drain-to-source voltage: 60V
  • Listed continuous drain current: 32A under specified case-temperature conditions
  • Maximum power dissipation: 79W with the case maintained at the specified temperature
  • Listed on-resistance: 35mΩ at 16A and VGS = 10V
  • TO-220-3 through-hole package
  • Suitable for DC switching and power-control circuits
  • Supports heatsink mounting for thermal management

Technical Specifications

Parameter Specification
Product Model FQP30N06
Component Type N-Channel Power MOSFET
Drain-to-Source Voltage (VDS) 60V
Continuous Drain Current (ID) 32A at specified case-temperature conditions
On-Resistance (RDS(on)) 35mΩ maximum, at 16A and VGS = 10V (listed)
Gate Threshold Voltage (VGS(th)) 2.0–4.0V (listed)
Maximum Gate-to-Source Voltage (VGS) ±20V
Gate Charge (Qg) 20nC at VGS = 5V (listed)
Input Capacitance (Ciss) 1040pF at VDS = 25V (listed)
Maximum Power Dissipation 79W at specified case temperature
Junction Temperature Range -55°C to +175°C (listed)
Mounting Type Through-hole
Package TO-220-3
SKU 1686-1
Availability Out of stock
Price ₨ 80

Reviews

There are no reviews yet.

Be the first to review “FQP30N06 Transistor Power MOSFET N Channel 60V 30A”

Your email address will not be published. Required fields are marked *