IRF1010E N-Channel Power MOSFET 55V – 85A

₨ 70

The IRF1010E is an N-channel enhancement-mode power MOSFET designed for fast switching, motor control, and high-current DC power applications.
With a listed 60V drain-to-source rating and up to 81A continuous drain current under specified conditions, it is suitable for power electronics circuits with appropriate gate drive and thermal management

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Description

The IRF1010E N-Channel Power MOSFET is a high-current switching component designed to control electrical loads efficiently. Unlike a conventional bipolar transistor, a MOSFET is controlled by the voltage applied between its gate and source terminals, making it useful in power switching circuits and electronic control systems.

Featuring low on-state resistance and fast switching characteristics, the IRF1010E can be used in DC motor controllers, power supplies, battery-powered equipment, and other high-current applications. Its through-hole package supports PCB mounting and heatsink installation, making it suitable for projects that require effective heat dissipation.

The MOSFET’s current rating depends on operating conditions, including case temperature, gate-drive voltage, circuit design, and cooling. For reliable operation, select a suitable gate driver and verify the device’s electrical and thermal limits using the exact manufacturer’s datasheet.

Key Features

  • N-channel enhancement-mode power MOSFET
  • Listed drain-to-source voltage: 60V
  • Listed continuous drain current: 81A under specified conditions
  • Listed pulsed drain current: 330A
  • Voltage-controlled gate for switching applications
  • Fast switching characteristics
  • Low on-state resistance
  • Maximum gate-to-source voltage: ±20V
  • Maximum power dissipation: 170W under specified thermal conditions
  • Suitable for high-current DC power-control circuits

Technical Specifications

Parameter Specification
Model IRF1010E
Component Type N-Channel Power MOSFET
Operating Mode Enhancement mode
Drain-to-Source Voltage (VDS) 60V (listed)
Continuous Drain Current (ID) 81A (listed; conditions apply)
Pulsed Drain Current (IDM) 330A (listed)
Gate-to-Source Voltage (VGS) ±20V maximum (listed)
Maximum Power Dissipation 170W (listed; thermal conditions apply)
Maximum Operating Junction Temperature 175°C (listed)
Package Confirm exact package from the manufacturer’s datasheet
Mounting Type Through-hole (verify package variant)
SKU 1686
Availability Out of stock

 

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