IRF3205 FHP3205 N-Channel Power MOSFET

₨ 60

The IRF3205 / FHP3205 is an N-channel enhancement-mode power MOSFET designed for high-current switching and DC power-control applications.
With a listed 55V drain-to-source rating, low on-state resistance, and a TO-220AB package, it is suitable for motor controllers, battery-powered systems, and power electronics projects with proper gate drive and cooling.

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Description

The IRF3205 FHP3205 N-Channel Power MOSFET is a power semiconductor designed for efficient switching in high-current DC circuits. Its low drain-to-source on-resistance helps reduce conduction losses when the MOSFET is driven with the appropriate gate-to-source voltage.

This MOSFET is commonly considered for DC motor control, battery-powered equipment, switching power supplies, inverter circuits, and other power electronics applications. Its TO-220AB through-hole package allows convenient PCB installation and heatsink mounting.

The IRF3205 family is often selected for circuits requiring low conduction resistance. However, the listed 110A maximum current is dependent on specific datasheet conditions, including case temperature, gate voltage, and thermal management. For reliable operation, verify the exact part number and manufacturer’s datasheet before designing a circuit.

Key Features

  • N-channel enhancement-mode power MOSFET
  • Maximum drain-to-source voltage: 55V
  • Listed continuous drain current: 110A under specified conditions
  • Low on-state resistance: 0.008Ω at VGS = 10V, as listed
  • Maximum gate-to-source voltage: ±20V
  • Fast switching characteristics
  • TO-220AB through-hole package
  • Suitable for high-current DC switching and power-control circuits
  • Heatsink-compatible package design

Technical Specifications

Parameter Specification
Product Name IRF3205 / FHP3205 N-Channel Power MOSFET
Component Type Power MOSFET
Channel Type N-channel enhancement mode
Drain-to-Source Voltage (VDS) 55V
Continuous Drain Current (ID) 110A (listed; conditions apply)
Drain-to-Source On-Resistance (RDS(on)) 0.008Ω at VGS = 10V (listed)
Gate-to-Source Voltage (VGS) ±20V maximum
Peak Pulsed Drain Current 390A (listed; pulse conditions apply)
Typical Gate Charge (Qg) 146nC at VGS = 10V
Typical Input Capacitance (Ciss) 3247pF at VDS = 25V
Typical Rise Time 101ns (listed)
Typical Fall Time 65ns (listed)
Typical Turn-On Delay 14ns (listed)

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