IRFZ46 50A 50V N-Channel Power MOSFET

₨ 50

The IRFZ46 is an N-channel power MOSFET designed for high-current switching, automotive electronics, and DC power-control applications.
With a listed continuous drain current of 50A and a TO-220AB package, it is suitable for power electronics projects requiring appropriate gate drive, thermal management, and protection

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Description

The IRFZ46 N-Channel Power MOSFET is a power semiconductor designed for efficient electronic switching. It uses a voltage-controlled gate to regulate current between the drain and source terminals, making it useful in automotive electronics, motor controllers, DC switching circuits, and other power-management applications.

Its low on-state resistance can help reduce conduction losses when the MOSFET is driven with a suitable gate voltage. The TO-220AB package supports through-hole mounting and heatsink installation, making the device practical for power electronics prototypes and repair projects.

The IRFZ46 can be used to control suitable DC loads, but its actual current-handling capability depends on gate-drive voltage, operating temperature, cooling, PCB layout, and other circuit conditions. Always check the manufacturer’s datasheet before designing around the maximum ratings.

Key Features

  • N-channel power MOSFET
  • Drain-to-source voltage: 55V in the detailed specifications
  • Continuous drain current: 50A, as listed
  • TO-220AB through-hole package
  • Low on-state resistance, subject to specified operating conditions
  • Fast switching characteristics
  • Maximum gate-to-source voltage: ±20V
  • Listed maximum power dissipation: 150W under specified thermal conditions
  • Suitable for automotive and general-purpose DC switching applications

Technical Specifications

Parameter Specification
Model IRFZ46
Component Type N-Channel Power MOSFET
Drain-to-Source Voltage (VDS) 55V in detailed specifications; 50V in product title/table — verify
Continuous Drain Current (ID) 50A (listed; conditions apply)
Drain-to-Source On-Resistance (RDS(on)) 0.024Ω in one table; 0.028Ω in detailed specifications — verify
Gate-to-Source Voltage (VGS) ±20V maximum
Total Gate Charge (Qg) 67nC (listed)
Maximum Power Dissipation 150W (listed; thermal conditions apply)
Package TO-220AB
Mounting Type Through-hole
SKU 1179
Availability Out of stock
Price ₨ 50

Pin Configuration

The supplied listing gives the following pin arrangement:

Pin Number Pin Name Function
1 Gate (G) Controls MOSFET switching
2 Drain (D) Main current terminal
3 Source (S) Main current return terminal
Metal Tab Drain (D) Typically connected to the drain; verify the exact datasheet

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